mar. 2002 outline drawing dimensions in mm to-220f type name voltage class ? measurement point of case temperature 3.2 0.2 1.3 max 0.8 2.54 13.5 min 3.6 5.0 1.2 8.5 10.5 max 5.2 4.5 17 2.54 2.8 0.5 2.6 ? ? ? ??? ? ? ? t 1 terminal t 2 terminal gate terminal mitsubishi semiconductor ? triac ? BCR12PM-14 medium power use insulated type, planar passivation type BCR12PM-14 application switching mode power supply, light dimmer, electric flasher unit, hair driver, control of household equipment such as tv sets ?stereo ?refrigerator ?washing machine ?infrared kotatsu ?carpet, solenoid drivers, small motor control, copying machine, electric tool ? 1. gate open. symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage conditions commercial frequency, sine full wave 360 conduction, t c =74 c 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value t a =25 c, ac 1 minute, t 1 ?t 2 ?g terminal to case unit a a a 2 s w w v a c c g v ratings 12 120 60 5 0.5 10 2 ?0 ~ +125 ?0 ~ +125 2.0 2000 symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class unit v v 14 700 840 maximum ratings ? i t (rms) ...................................................................... 12a ? v drm ....................................................................... 700v ? i fgt ! , i rgt ! , i rgt # ............................................ 30ma ? v iso ........................................................................ 2000v ? ul recognized: yellow card no.e80276(n) file no. e80271
mar. 2002 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c mitsubishi semiconductor ? triac ? BCR12PM-14 medium power use insulated type, planar passivation type ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. the contact thermal resistance r th (c-f) in case of greasing is 0.5 c/w. ? 4. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 c 2. rate of decay of on-state commutating current (di/dt) c =?.0a/ms 3. peak off-state voltage v d =400v symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =125 c, v drm applied t c =25 c, i tm =20a, instantaneous measurement t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c, v d =1/2v drm junction to case ? 3 t j =125 c unit ma v v v v ma ma ma v c/w v/ s typ. ! @ # ! @ # electrical characteristics limits min. 0.2 10 max. 2.0 1.6 1.5 1.5 1.5 30 30 30 3.5 performance curves 10 0 23 5710 1 80 40 23 5710 2 44 120 160 200 60 20 100 140 180 0 3.8 0.6 1.4 2.2 3.0 1.0 1.8 2.6 3.4 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ? t j = 125 c t j = 25 c maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ? 4
mar. 2002 mitsubishi semiconductor ? triac ? BCR12PM-14 medium power use insulated type, planar passivation type 23 10 1 5710 0 23 5710 1 23 5710 2 3.5 3.0 2.5 2.0 1.5 1.0 0.5 4.0 0 23 10 2 5710 3 23 5 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 v gd = 0.2v p gm = 5w v gm = 10v v gt = 1.5v i gm = 2a i rgt i i fgt i, i rgt iii p g(av) = 0.5w 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 typical example 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 i fgt i i rgt i, i rgt iii typical example maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/ w) conduction time (cycles at 60hz) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) gate trigger voltage vs. junction temperature junction temperature ( c) maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance ( c/ w) conduction time (cycles at 60hz) 10 3 10 1 10 3 10 4 10 2 7 5 3 2 10 0 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 23 57 23 57 10 2 10 5 23 57 23 57 no fins 16 12 6 4 2 14 10 8 0 16 0 24 8 6101214 360 conduction resistive, inductive loads gate characteristics 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c )
mar. 2002 mitsubishi semiconductor ? triac ? BCR12PM-14 medium power use insulated type, planar passivation type laching current vs. junction temperature laching current (ma) junction temperature ( c) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature ( c) 140 40 40 60 20 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 typical example 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 10 1 typical example 160 120 100 60 20 0 16 0 2 6 10 14 40 80 140 4812 curves apply regardless of conduction angle 360 conduction resistive, inductive loads allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) holding current vs. junction temperature junction temperature ( c) 160 120 100 60 20 0 3.2 0 0.4 1.2 2.0 2.8 40 80 140 0.8 1.6 2.4 natural convection no fins curves apply regardless of conduction angle resistive, inductive loads 160 120 100 60 20 0 16 0 2 6 10 14 40 80 140 4812 60 60 t2.3 120 120 t2.3 100 100 t2.3 natural convection all fins are black painted aluminum and greased curves apply regardless of conduction angle no fins resistive, inductive loads 160 40 0 40 80 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t 2 + , g typical example t 2 + , g + t 2 , g ? ? ? typical example distribution 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) 100 (%) holding current ( t j = t c ) holding current ( t j = 25 c )
mar. 2002 6 ? 6 ? 6 ? 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits mitsubishi semiconductor ? triac ? BCR12PM-14 medium power use insulated type, planar passivation type 160 100 80 40 20 0 140 40 40 60 20 0 20 60 80 140 100120 60 120 typical example breakover voltage vs. junction temperature junction temperature ( c) commutation characteristics critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i typical example 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 # 2 # 1 typical example t j = 125 c i quadrant iii quadrant 10 1 23 10 0 5710 1 23 5710 2 23 5710 3 3 2 10 2 7 5 3 2 7 5 7 5 3 2 10 0 typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value voltage waveform current waveform v d t (dv/dt) c i t t (di/dt) c 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c )
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